Silicon Photonics
- Buried Contact Group
- High Energy Efficiency Group
- Thin Film Group
- 3rd Generation Photovoltaics
- Collaborative Research
- Facilities & Infrastructure
University Staff:
A/Prof. Jianhua Zhao (Group Leader: integrated LEDs)
Dr. Thorsten Trupke (Group Leader: silicon laser)
Prof. Martin Green
Prof. Stuart Wenham
Research Fellow:
Dr. Aihua Wang
Research Assistant:
Guangchun Zhang
Collaborators:
Prof. Peter Würfel, University of Karlsruhe
Dr. Otwin Breitenstein, Max Planck Institute, Halle
Dr. Pietro Altermatt, Australian National University
The Centre’s work in silicon photonics has two main thrusts. The first is to demonstrate silicon light emitters that can be integrated into silicon microelectronic circuits. The second is to investigate the feasibility of innovative schemes for demonstrating the first silicon laser. A range of silicon optoelectronic characterisation activities underpin both these programs.
Radiative Recombination Coefficient
Part of the work in the area of light emission from bulk silicon is to theoretically describe and to understand the dependence of the (external quantum efficiency) EQE on the excess carrier concentration quantitatively. This requires the rate of radiative recombination in silicon, which is described via the radiative recombination coefficient B(T). This project began with an accurate determination of B(T) since data found in the literature is very contradictory.
As part of the work on developing efficient light emitting diodes (LEDs) on (silicon-on-insulator) SOI-wafers, lateral p-i-n LED structures were designed and fabricated.
Inter-Conduction-Band Transitions
The (photo-luminescence) PL of bulk crystalline silicon under UV-excitation was measured as part of the research aimed at obtaining laser light from silicon.
Lasing in Indirect Gap Semiconductors
Theoretical work at the Centre revisited the limitations on optical gain in silicon. A generally accepted theoretical work on optical transitions in indirect semiconductors for laser applications which stated that optical gain is not possible in silicon was found to be flawed by Centre researchers.