| BSc(Hons) PhD. Melb.
|
|
Post-Doctoral Fellow
Contact Details
Office Location:Room LG12B, Electrical Engineering Building
Email:r.bardos@unsw.edu.au
Phone: +61 2 9385-5914
Fax: +61 2 9385-5412
|
Robert Bardos' CV (PDF 21 kb)
Research Interests
- Photovoltaic solar energy conversion
- Silicon solar cells
- Photovoltaic device physics and modelling
- Solar cell and material characterisation, particularly photoluminescence based lifetime measurements
Selected Publications
- T. Trupke, R.A. Bardos, M.C. Schubert et al., “Photoluminescence imaging of silicon wafers”, Applied Physics Letters (Accepted 2006).
- R.A. Bardos, T. Trupke, M.C. Schubert et al., “Trapping artifacts in quasi steady state photoluminescence and photoconductance lifetime measurements on silicon wafers”, Applied Physics Letters 88, 053504 (2006).
- T. Trupke, R.A. Bardos, M.D Abbott et al., “Suns-photoluminescence: Contactless determination of the current voltage characteristics of silicon wafers”, Applied Physics Letters 87, 093503 (2005).
- T. Trupke, R.A. Bardos, and M.D. Abbott, “Self Consistent Calibration of Photoluminescence and Photoconductance Lifetime Measurements”, Applied Physics Letters 87, 184102 (2005)
- T. Trupke and R.A. Bardos, “Photoluminescence: A surprisingly sensitive lifetime technique”, 31st IEEE PVSC, Orlando, USA (2005).
- T. Trupke, R.A. Bardos, F. Hudert et al., "Effective excess carrier lifetimes exceeding 100ms in float zone silicon determined from photoluminescence," 19th EPVSC, Paris, France (2004).
- R.A. Bardos, J.E. Cotter, T.Trupke et al., “Comparative analysis of n-type versus p-type string ribbon silicon wafers”, WCPEC-4, Hawaii, USA, May (2006).
- M.D. Abbott, J.E. Cotter, T. Trupke and R.A. Bardos, “Investigation of edge recombination effects in silicon solar cell structures using photoluminescence”, Applied Physics Letters 88, 114105 (2006).
- T. Trupke and R.A. Bardos, “Photoluminescence: A versatile characterisation technique for crystalline silicon”, 15th Crystalline Silicon Workshop, Vail, August (2005).
- A. Straub, R. Gebs, H. Habenicht, S. Trunk, R. A. Bardos, A. B. Sproul, and A. G. Aberle, “Impedance analysis: A powerful method for the determination of the doping concentration and built-in potential of nonideal semiconductor p-n diodes”, J. Appl. Phys. 97, 083703 (2005).
- T. Trupke and R. A. Bardos, “Self-consistent determination of the generation rate from photoconductance measurements”, Applied Physics Letters 85 (16), 3611-3613 (2004).
Please see the Publications section of this website.
|